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Journals   A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Chinese Journal of Semiconductors
0253-4177
2000 Issue 10
Strain-Compensated InGaAs/InAlAs Quantum Cascade Laser
liu feng qi ; zhang yong zhao ; zhang quan sheng ; wang zhan guo
..............page:1038-1040
A Regular Time-Efficient VLSI Architecture for Multiplication Modulo 2n＋1
zhou hao hua ; li zhi yong ; xie wen lu ; zhang zhai zuo
..............page:1032-1037
Measurement of Junction Temperature Inhomogeneity of Bipolar Transistors by ΔVbe Method
yang zhi wei ; miao qing hai ; zhang de jun ; zhang xing hua ; yang lie yong
..............page:1028-1031
Impact of Device Architecture on Performance and Reliability of Deep Submicron SOI MOSFETs (invited paper)
F.Balestra
..............page:937-954
Reducing Barrier Height of PtSi Schotty Diode Using Ion Injection Doping
liu shuang ; ning yong gong ; yang zhong xiao ; chen ai ; xiong ping ; yang jia de
..............page:1024-1027
Large-Area Surface Treatment of Monocrystalline Silicon by ECR Plasmas at Low Temperature
sun jian ; wu jia da ; zhong xiao xia ; lai bing ; ding xun min ; li fu ming
..............page:1019-1023
Multi-Cell Structure Model for Semiconductor Arrestor
wang hui gang ; yu yue hui ; liu feng mei ; peng zhao lian ; huang qiu zhi
..............page:1014-1018
On-Wafer Testing of GaAs Monolithic Integrated Laser-Diode Driver
sun wei ; tian xiao jian ; sun jian guo ; yi mao bin ; zhang mu yi ; zhang yu qing ; ma zhen chang
..............page:1010-1013
Mixed-Mode Simulation of High Voltage and Power IC
zhang ; li zhao ji ; yang zhi lian
..............page:1005-1009
Thickness Measurements for Ultrathin-Film Insulator MOS Structure Using Fowler-Nordheim Tunneling Current Oscillations
mao ling feng ; tan chang hua ; xu ming zhen ; wei jian lin
..............page:999-1004
IR Properties in SIMOX Films and New Nondestructive Method Determining Thickness of Buried SiO2 Layers and Surface Si Layers
lu dian tong ;p.l.f.hemment
..............page:993-998
Photoluminescence and Microstructure of Er-Doped a-Si : H,O Deposited by PECVD
chen wei de ; liang jian jun ; wang yong qian
..............page:988-992
Control of Spontaneous Emission in Quantum Well Micro-Cavity Lasers with Distributed Bragg Reflectors
zhao hong dong ; zhang yi zuo ; zhang cun shan ; zhou ge ; shen guang di
..............page:984-987
UHV/CVD Si Epitaxial Growth on Double Layer Porous Silicon
wang zuo ; huang jing yun ; huang yi ping ; li ai zhen ; bao zong ming ; zuo shi zuo ; ye zhi zhen
..............page:979-983
Effects of Rapid Thermal Annealing on Optical Properties of GaInNAs/GaAs Single Quantum Well Grown by Plasma-Assisted Molecular Beam Epitaxy
ZHANG Wei;PAN Zhong;LI Lian-he;WANG Xue-yu;LIN Yao-wang
..............page:947-978
Development of Microwave SiGe Heterojunction Bipolar Transistors
JIA Hong-yong;Zhu Wen-bin;LIU Zhi-nong;CHEN Pei-yi;Peihsin TSIEN
..............page:970-973
Compact and Economical MMI Optical Power Splitter for Optical Communication
MA Hui-lian;YANG Jian-yi;JIANG Xiao-qing;WANG Ming-hua
..............page:966-969
Annealing Behavior of Si1-xGex/Si Heterostructures
YU Zhuo;LI Dai-zong;CHENG Bu-wen;LI Cheng;LEI Zhen-lin;HUANG Chang-jun;ZHANG Chun-hui;YU Jin-zhong;WANG Qi-ming;LIANG Jun-wu
..............page:962-965
Analytical Charge Voltage Model in MOS Inversion Layer Based on Space Charge Capacitance
MA Yu-tao;LIU Li-tian;LI Zhi-jian
..............page:955-961
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